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19 November 2018
SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards. detail

16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential. detail

15 November 2018
SK hynix develops next-gen DRAM DDR5 for big data, AI applications
South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence. detail

9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Koreas SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones. detail

1 Desember 2016
Video
Server HP ProLiant DL20 Gen9 Server Memory Ram Using Sk Hynix detail

1 Mei 2016
Hynix Collaborates with HP on Next Generation Memory Products, ReRAM
Hynix Semiconductor Inc. (Hynix, www.hynix.com) today announced that it has entered into a joint development agreement with HP to develop memristor technology in ReRAM (Resistive Random Access Memory), a next generation memory product. detail

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product arrow SK HYNIX SSD SL300 SERIES 250GB 2,5" SATA

SL300 SERIES 250GB 2,5" SATA

SSD SK HYNIX SL300 S/N HFS250G32TND-N1A2A

Density 120 / 250 / 500GB
Form Factor 2.5" Standard
Cell type TLC
Sequential Performance
(128KB, Typical)
Read : Up to 560MB/s (120/ 250/ 500GB)
Write : Up to 460MB/s(120GB), 490MB/s (250/ 500GB)
Random Performance
(4KB, Typical)
Read : Up to 90K IOPS(120GB), 100K IOPS(250/ 500GB)
Write : Up to 83K IOPS(120GB), 85K IOPS(250/ 500GB)
Temperature Range
Operating
0℃ to 70℃
Power Consumption
(Typical)
Active Read : 2.3W(120/250/500GB)
Active Write : 2.0W(120GB), 3.0W(250GB), 4.5W(500GB)
Idle : 50mW(120/250/500GB)
Shock Operating : 1500G, duration 0.5ms
Non-Operating : 1500G, duration 0.5ms
Vibration Operating : 20G, 10~2KHz (Frequency)
Non-Operating : 20G, 10~2KHz (Frequency)
Reliability MTBF : 1.5M | BER : 1 error in 1015 bits Transferred
Dimension (69.85±0.25) x (100±0.25) x (Max, 7) (mm)
Weight 60g±5%
Voltage 5V±5%
Warranty 3 years or 75TBW(120/250GB), 150TBW(500GB)