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23 November 2021
SK hynix Announces Development of HBM3 DRAM
Seoul, October 20, 2021 SK hynix Inc. (or “the Company”, www.skhynix.com) announced that it has become the first in the industry to successfully develop the High Bandwidth Memory 3, the world’s best-performing DRAM. HBM3, the fourth generation of the HBM technology* with a combination of multiple DRAM chips vertically connected, is a high value product that innovatively raises the data processing rate. *Previous three generations are HBM, HBM2 and HBM2E, which is an update to the HBM2 specification with increased bandwidth and capacities. The latest development, which follows the start of mass production of HBM2E in July last year, is expected to help consolidate the company’s leadership in the market. SK hynix was also the first in the industry to start mass production of HBM2E. SK hynix’s HBM3 is not only the fastest DRAM in the world, but also comes with the biggest capacity and significantly improved level of quality. detail
9 Desember 2020
SK hynix Launches World’s First DDR5 DRAM
SK hynix Inc. (or ‘the Company,’ www.skhynix.com) announced to launch world’s first DDR5 DRAM. It is a high-speed and high-density product optimized for Big Data, Artificial Intelligence (AI), and machine learning (ML) as a next generation standard of DRAM. Since SK hynix announced the development of World’s First 16 Gigabit (Gb) DDR5 DRAM on November 2018, the Company has provided its major partners including Intel with sample products, and has completed various tests and verification of its functions and compatibility. This will allow SK hynix to provide its customers with the products once the DDR5 market becomes active. detail
19 November 2018
SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards. detail
16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential. detail
15 November 2018
SK hynix develops next-gen DRAM DDR5 for big data, AI applications
South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence. detail
9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Koreas SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones. detail
» index berita
SK hynix Announces Development of HBM3 DRAM
Seoul, October 20, 2021 SK hynix Inc. (or “the Company”, www.skhynix.com) announced that it has become the first in the industry to successfully develop the High Bandwidth Memory 3, the world’s best-performing DRAM. HBM3, the fourth generation of the HBM technology* with a combination of multiple DRAM chips vertically connected, is a high value product that innovatively raises the data processing rate. *Previous three generations are HBM, HBM2 and HBM2E, which is an update to the HBM2 specification with increased bandwidth and capacities. The latest development, which follows the start of mass production of HBM2E in July last year, is expected to help consolidate the company’s leadership in the market. SK hynix was also the first in the industry to start mass production of HBM2E. SK hynix’s HBM3 is not only the fastest DRAM in the world, but also comes with the biggest capacity and significantly improved level of quality. detail
9 Desember 2020
SK hynix Launches World’s First DDR5 DRAM
SK hynix Inc. (or ‘the Company,’ www.skhynix.com) announced to launch world’s first DDR5 DRAM. It is a high-speed and high-density product optimized for Big Data, Artificial Intelligence (AI), and machine learning (ML) as a next generation standard of DRAM. Since SK hynix announced the development of World’s First 16 Gigabit (Gb) DDR5 DRAM on November 2018, the Company has provided its major partners including Intel with sample products, and has completed various tests and verification of its functions and compatibility. This will allow SK hynix to provide its customers with the products once the DDR5 market becomes active. detail
19 November 2018
SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards. detail
16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential. detail
15 November 2018
SK hynix develops next-gen DRAM DDR5 for big data, AI applications
South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence. detail
9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Koreas SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones. detail
» index berita
