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19 November 2018
SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards. detail
16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential. detail
15 November 2018
SK hynix develops next-gen DRAM DDR5 for big data, AI applications
South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence. detail
9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Korea’s SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones. detail
1 Desember 2016
Video
Server HP ProLiant DL20 Gen9 Server Memory Ram Using Sk Hynix detail
1 Mei 2016
Hynix Collaborates with HP on Next Generation Memory Products, ReRAM
Hynix Semiconductor Inc. (‘Hynix’, www.hynix.com) today announced that it has entered into a joint development agreement with HP to develop memristor technology in ReRAM (Resistive Random Access Memory), a next generation memory product. detail
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SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards. detail
16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential. detail
15 November 2018
SK hynix develops next-gen DRAM DDR5 for big data, AI applications
South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence. detail
9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Korea’s SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones. detail
1 Desember 2016
Video
Server HP ProLiant DL20 Gen9 Server Memory Ram Using Sk Hynix detail
1 Mei 2016
Hynix Collaborates with HP on Next Generation Memory Products, ReRAM
Hynix Semiconductor Inc. (‘Hynix’, www.hynix.com) today announced that it has entered into a joint development agreement with HP to develop memristor technology in ReRAM (Resistive Random Access Memory), a next generation memory product. detail
» index berita
