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19 November 2018
SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards. detail

16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential. detail

15 November 2018
SK hynix develops next-gen DRAM DDR5 for big data, AI applications
South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence. detail

9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Koreas SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones. detail

1 Desember 2016
Video
Server HP ProLiant DL20 Gen9 Server Memory Ram Using Sk Hynix detail

1 Mei 2016
Hynix Collaborates with HP on Next Generation Memory Products, ReRAM
Hynix Semiconductor Inc. (Hynix, www.hynix.com) today announced that it has entered into a joint development agreement with HP to develop memristor technology in ReRAM (Resistive Random Access Memory), a next generation memory product. detail

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SK hynix develops next-gen DRAM DDR5 for big data, AI applications


15 November 2018

South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence.

The chipmaker plans to mass produce the new product from 2020, when demand for DDR5 RAM is expected to peak on the back of a growing number of data-intensive apps requiring faster and more power-efficient memory chips.

DDR5 is a next-generation DRAM standard that offers ultra-high speed and high density, with reduced power consumption in comparison to the DDR4, the previous generation’s standard.
The new product makes use of the same 1Ynm process technology used to manufacture DDR4 DRAM, which was recently unveiled by SK hynix.

According to the company, DDR5 DRAM consumes 30 percent less power than the preceding DDR4. Despite using less power, the DDR5 boasts a data transfer rate of 5,200 megabits per second, around 60 percent faster than the DDR4’s rate of 3,200 Mbps.

This speed translates to processing 41.6 gigabytes of data in one second, or around 11 full-HD video files sized 3.7 gigabytes each.

SK hynix claims its 16 Gb DDR5 is the first of its kind in the industry to meet specification standards of JEDEC, a semiconductor trade and engineering standardization organization.

In steps toward formal commercialization, SK said it has already provided a client chipmaker, whose name was not disclosed, with Registered Dual In-line Memory Modules and Unbuffered DIMM for server and PC platforms made using DDR5, to test out the memory chip’s compatibility and potential for formal deployment.

“Based on technological advancements that allowed the industry’s first DDR5 DRAM to meet the JEDEC standards, SK hynix plans to begin mass producing the product from 2020, when the DDR5 market is expected to open, to actively respond to the demands of clients,” Cho Joo-hwan, vice president and head of the volume product design group at SK hynix, said in a statement.

Citing market research company IDC, SK hynix said global demand for DDR5 is expected to rise from 2020, accounting for 25 percent of the total DRAM market in 2021 and 44 percent in 2022.

By Sohn Ji-young (jys@heraldcorp.com)



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  » 19 November 2018
SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards.

  » 16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential.

  » 9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Koreas SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones.

  » 1 Desember 2016
Video
Server HP ProLiant DL20 Gen9 Server Memory Ram Using Sk Hynix

  » 1 Mei 2016
Hynix Collaborates with HP on Next Generation Memory Products, ReRAM
Hynix Semiconductor Inc. (Hynix, www.hynix.com) today announced that it has entered into a joint development agreement with HP to develop memristor technology in ReRAM (Resistive Random Access Memory), a next generation memory product.