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19 November 2018
SK Hynix Ready to Mass-produce DRAMs through Second-Generation 10nm Process By Kim Eun-jin
SK Hynix announced on Nov. 12 that the company has developed an 8Gbit DDR DRAM with higher productivity and power efficiency by applying a second-generation 10-nanometer micro-process. The company said the new technology boosted its productivity by about 20% while reducing 8Gbit DDR DRAMs’ consumption of electric power by more than 15%. This product can stably transfer data at a rate of 3,200Mbps, which is the highest rate supported by DDR4 standards. detail

16 November 2018
SK Hynix Reveals DDR4-3200 Memory Phase Clocking
SK Hynix this week announced that it has completed development of its latest-generation DDR4 memory chips. The new DRAM chips are made using the company’s second-generation 10 nm-class fabrication technology (1Ynm) and feature a number of enhancements designed to cut-down die sizes, reduce power consumption, and improve their frequency potential. detail

15 November 2018
SK hynix develops next-gen DRAM DDR5 for big data, AI applications
South Korea’s second-largest chipmaker SK hynix said Thursday that it has developed next-generation dynamic random-access memory, 16 gigabits DDR5, which offers speed and improved power efficiency to meet demand from sectors with intensive computing needs, such as big data analytics and artificial intelligence. detail

9 November 2017
SK Hynix posts record third-quarter profit on surging chip demand
SEOUL (Reuters) - South Koreas SK Hynix Inc (000660.KS) said on Thursday third-quarter operating profit leapt more than five-fold to a record, matching market expectations, on rocketing demand for memory chips for servers and smartphones. detail

1 Desember 2016
Video
Server HP ProLiant DL20 Gen9 Server Memory Ram Using Sk Hynix detail

1 Mei 2016
Hynix Collaborates with HP on Next Generation Memory Products, ReRAM
Hynix Semiconductor Inc. (Hynix, www.hynix.com) today announced that it has entered into a joint development agreement with HP to develop memristor technology in ReRAM (Resistive Random Access Memory), a next generation memory product. detail

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OVERVIEW

Overview

DRAM Solutions for your PCs and Servers

For a wide range of requirements, our DRAM Module solutions satisfy

whatever need you have for your PCs and Servers.
Leading to the right solution for a faster and more reliable experience.

UDIMM

UDIMM

Full Name
Unbuffered DIMM
Features
  • Without a buffer or register → faster latency
  • Low density modules only (Due to error issues)
  • Supports 2DPC and up to 2 ranks per DIMM
Main Application
Desktop

SODIMM

SODIMM

Full Name
Small Outline DIMM
Features
  • Smaller than normal DIMMs
  • For systems with limited space issues
Main Application
Notebook

RDIMM

RDIMM

Full Name
Registered DIMM
Features
  • A register is placed between system memory controller and DRAM to control DIMM’s address and command signals
  • Added 8 bit parity signals for error correction
  • Supports x8, x4 DRAM / Supports 3DPC and up to 4 ranks per DIMM
Main Application
Server

LRDIMM

LRDIMM

Full Name
Load-Reduced DIMM
Features
  • Register replaced with memory buffer to reduce load
  • Better latency and better fit for high density modules
Main Application
Server

ECC UDIMM / ECC SODIMM

ECC UDIMM / ECC SODIMM

Full Name
Error Correction Code UDIMM / SODIMM
Features
  • Able to detect and correct data corruption
  • Reduces number of crashes
Main Application
Server

VLP RDIMM / VLP ECC UDIMM

VLP RDIMM / VLP ECC UDIMM

Full Name
Very Low Profile RDIMM / ECC UDIMM
Features
  • Height lower than normal DIMMs
  • Takes less space, better cooling, but not fit for high density modules
Main Application
Server (Blade)